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* written by unit test
* cell SUBCKT
* pin
* pin A
* pin V42
* pin Z
* pin gnd
* pin gnd
.SUBCKT SUBCKT 1 2 4 5 6 7
* net 2 A
* net 4 V42(%)
* net 5 Z
* net 6 gnd
* net 7 gnd
* device instance $1 r0 *1 0,0 HVPMOS
XD_$1 4 3 5 1 HVPMOS PARAMS: L=0.2 W=1 AS=0.18 AD=0.18 PS=2.16 PD=2.16
* device instance $2 r0 *1 0,0 HVPMOS
XD_$2 4 2 3 1 HVPMOS PARAMS: L=0.2 W=1 AS=0.18 AD=0.18 PS=2.16 PD=2.16
* device instance $3 r0 *1 0,0 HVNMOS
XD_$3 6 3 6 7 HVNMOS PARAMS: L=1.13 W=2.12 PS=6 PD=6 AS=0 AD=0
* device instance $4 r0 *1 0,0 HVNMOS
XD_$4 6 3 5 7 HVNMOS PARAMS: L=0.4 W=0.4 PS=1.16 PD=1.16 AS=0.19 AD=0.19
* device instance $5 r0 *1 0,0 HVNMOS
XD_$5 6 2 3 7 HVNMOS PARAMS: L=0.4 W=0.4 PS=1.76 PD=1.76 AS=0.19 AD=0.19
.ENDS SUBCKT
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